Advanced Power Technology MS1409
The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications.| Part No. | MS1409 |
|---|---|
| Datasheet | MS1409 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS |
| Buy | Stock & Price |
FEATURES
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● 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector
DESCRIPTION
: Gold metalization and diffused emitter ballast resistors provide superior long term reliability. TO-39ABSOLUTE MAXIMUM RATINGS
(TCASE = 25°C) Symbol VCBO VCEO VEBO PDISS IC TJ TSTG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Total Power Dissipation Collector Peak Current Junction Temperature Storage Temperature Value 65 40 4.0 7.0 1.0 200 -65 to 200 Unit V V V W A ºC ºC Thermal Data RTH(J-CASE) Thermal Resistance Junction-case 25 °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. DataSheet 4 U .com MS1409ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC Symbol BVebo BVcbo BVceo Iceo HFE IE = 0.10 mA IC = 0.3 mA IC = 3 mA VCE = 30 V VCE = 5 V Test Conditions IC = 0 mA IE = 0 mA IS = 0 mA IC = 100 mA Min.
