Advanced Power Technology MS1642P
The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands.| Part No. | MS1642P |
|---|---|
| Datasheet | MS1642P Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
FEATURES
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● 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY COMMON EMITTER CONFIGURATION
DESCRIPTION
: Diffused emitter ballast resistors and computer controlled wirebonding techniques ensure maximum device reliability and consistency.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C) Symbol PDISS IC(max) T STG VCBO VCEO VEBO Parameter Power Dissipation* Device Current* Storage Temperature Collector – Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Value 27 1.5 -65 to +150 60 33 4.0 Unit W A ºC V V V Thermal Data RTH(J-C) Thermal Resistance Junction-case 6.4 ° C/W * Applies only to rated RF amplifier operation Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. MS1642PELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) Symbol Bvceo Bvces Bvcbo Bvebo Icbo HFE IC = 20 mA IC= 20 mA IC = 20 mA IE= 2.0 mA VCB = 30 V VCE = 5 V STATIC Test Conditions IE = 0 mA IC = 0 mA IE = 0 mA IC = 0 mA IC = 500 mA Min.
