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MS1649 Datasheet PDF

Advanced Power Technology MS1649

The MS1649 is a 12.5V epitaxial NPN planar transistor designed primarily for UHF communications. This device is packaged in a grounded emitter TO-39 package for increased power gain and optimum heat dissipation.
Part No. MS1649
Datasheet MS1649 Download
Manufacturer
Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS
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MS1649 datasheet page 1 preview

APPLICATIONS

FEATURES

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● 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Collector 2. Base 3. Emitter

DESCRIPTION

: TO-39

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C) Symbol VCBO VCEO VEBO IC PTOT T STG TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature Value 36 16 3.5 1.0 7.8 -65 to +200 +200 Unit V V V A W °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-Case 35.0 °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. Rev A: 09/16/05 MS1649

ELECTRICAL SPECIFICATIONS

(Tcase = 25°C) Symbol BVCES BVCEO BVEBO ICES HFE IC = 50mA IC = 50mA IE = 1mA VCB = 12.5V VCE = 5.0V STATIC Test Conditions Min. VBE = 0 IB = 0 IC = 0 VBE = 0 IC =100mA 36 16 3.5 --20 Value Typ. ----------- Max. ------1.0 150 Unit V V V mA --- DYNAMIC Symbol GPE f = 470MHz f = 470MHz f = 1.0MHz Test Conditions Min.
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