MS2176 Datasheet | Advanced Power Technology

Features - - - - - - 350 WATTS @ 10µ SEC PULSE WIDTH, 10% DUTY 300 WATTS @ 250µ SEC PULSE WIDTH 10% DUTY CYCLE 9.5 DB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS .. CYCLE DESCRIPTION : The MS2176 is a gold metallized silicon NPN pulse power transistor designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 21.6 875 +200 -65 to +150 V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 0.2 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at .ADVANCEDPOWER. or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Min. Value Typ. Max. Units BVCBO BVCES .. BVCEO BVEBO ICES h FE IC = 50 m A IC = 50 m A IC = 50 m A IE = 10 m A VCE =30 V VCE = 5 V IE = 0 m A VBE = 0 V IB = 0 m A IC = 0 m A IE = 0 m A IC = 5 A 65 65 28 3.5 10 7.5 100 V V V V m A DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Units POUT GP çC f = 425 MHz f = 425 MHz f = 425 MHz PIN = 33.5 W PIN = 300 W PIN = 25 W VCE = 40 V VCE = 40 V VCE = 40 V 300 9.5 55 W d B % Note: Pulse Width = 250µSec, Duty Cycle = 10% Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at .ADVANCEDPOWER. or contact our factory direct. TYPICAL PERFORMANCE .. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained...