MS2176 Description
The MS2176 is a gold metallized silicon NPN pulse power transistor designed for applications requiring high peak power and low duty cycles within the frequency range of 400 500 MHz. RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5...
MS2176 Key Features
- 350 WATTS @ 10µ SEC PULSE WIDTH, 10% DUTY 300 WATTS @ 250µ SEC PULSE WIDTH 10% DUTY CYCLE 9.5 DB MIN. GAIN REFRACTORY GO