MS2176
MS2176 is RF & MICROWAVE TRANSISTORS manufactured by Microsemi.
DESCRIPTION
KEY FEATURES
W W W . Microsemi .
The MS2176 is a gold metallized silicon NPN pulse power transistor. The MS2176 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400
- 500 MHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi.
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol VCBO VCES VEBO IC PDISS TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value 65 65 3.5 21.6 875 +200 -65 to +150
Unit V V V A W °C °C
350 Watts @ 10µ Sec Pulse Width, 10% Duty Cycle 300 Watts @ 250µ Sec Pulse Width 10% Duty Cycle 9.5 d B Min. Gain Refractory Gold Metallization Emitter Ballasting And Low Thermal Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions
APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
°C/W
UHF Pulsed Applications ta S hee t4U .co m
PIN CONNECTION 1
2 3 1. Collector 2. Base
4 3. Emitter 4. Base
.400 X .400 2LFL (M106) hermetically sealed
MS2176 w.D a ww
Copyright 2000 MSC1651.PDF 2001-01-04
Microsemi
RF Products Division 140 merce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
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RF & MICROWAVE TRANSISTORS
RF PRODUCTS DIVISION
P RODUCT P REVIEW
W W W . Microsemi .
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Symbol BVCBO BVCES BVCEO BVEBO ICES h FE IC = 50 m A IC = 50 m A IC = 50 m A IE = 10 m A VCB =30 V VCE = 5 V
Test Conditions IE = 0 m A VBE = 0 V IB = 0 m A IC = 0 m A IE = 0 m A IC = 5 A
Min. 65 65 28 3.5 10
MS2176 Typ.
Max.
Units V V V V m...
