MS2421
Features
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- DESIGNED
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- -
- -
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FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.) IFF 1030
- 1090 MHz 300 W (min.) DME 1025
- 1150 MHz 290 W (typ.) TACAN 960
- 1215 MHz 960
- 1215 MHz GOLD METALLIZATION POUT = 300W MINIMUM GP = 6.3 d B MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED MON BASE
DESCRIPTION
:
The MS2421 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN. The MS2421 is designed with internal input/output matching resulting in improved broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
PDISS VCES VCBO VEBO TJ IC T STG Power Dissipation Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Junction Temperature Device Current Storage Temperature
Parameter
Value
875 65 65 3.5 200 22 -65 to +200
Unit
ºC
ºC
Thermal Data
RTH(J-C) Junction-case Thermal...
