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MS2422 - RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

General Description

The MS2422 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN.

The MS2422 is designed with internal input/output matching resulting in improved broadband performance and low thermal resistance.

Key Features

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Datasheet Details

Part number MS2422
Manufacturer Advanced Power Technology
File Size 234.07 KB
Description RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Datasheet download datasheet MS2422 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2422 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features www.DataSheet4U.com • DESIGNED • • • • • • • • • • FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.) IFF 1030 – 1090 MHz 300 W (min.) DME 1025 – 1150 MHz 290 W (typ.) TACAN 960 – 1215 MHz 960 – 1215 MHz GOLD METALLIZATION POUT = 300W MINIMUM GP = 6.3 dB MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED COMMON BASE DESCRIPTION: The MS2422 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN.