MS2422
Features
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- DESIGNED
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FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.) IFF 1030
- 1090 MHz 300 W (min.) DME 1025
- 1150 MHz 290 W (typ.) TACAN 960
- 1215 MHz 960
- 1215 MHz GOLD METALLIZATION POUT = 300W MINIMUM GP = 6.3 d B MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED MON BASE
DESCRIPTION
:
The MS2422 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN. The MS2422 is designed with internal input/output matching resulting in improved broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCES VEBO IC PDISS TJ T STG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value
65 65 3.5 22 875 200 -65 to +150
Unit
V V V A W
ºC ºC
Thermal Data
RTH(J-C) Junction-case Thermal...
