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MS3383 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

General Description

The MS3383 is a common base, hermetically sealed silicon NPN microwave power transistor.

This device is designed for Class C applications in the 1 - 3 GHz frequency range.

Gold metallization and emitter ballasting provide long term reliability and superior ruggedness.

Key Features

  • www. DataSheet4U. com.
  • GOLD.

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Datasheet Details

Part number MS3383
Manufacturer Advanced Power Technology
File Size 113.13 KB
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Datasheet download datasheet MS3383 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS3383 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS Features www.DataSheet4U.com • • • • • • • GOLD METALIZATION POUT = 1.0 W MINIMUM 3.0 GHz GP = 7.0 dB INFINITE VSWR CAPABLE @ RATED CONDITIONS HERMETIC PACKAGE COMMON BASE CONFIGURATION DESCRIPTION: The MS3383 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class C applications in the 1 - 3 GHz frequency range. Gold metallization and emitter ballasting provide long term reliability and superior ruggedness.