Datasheet4U Logo Datasheet4U.com

TAN350 - high power COMMON BASE bipolar transistor

General Description

The TAN350 is a high power COMMON BASE bipolar transistor.

It is designed for pulsed systems in the frequency band 960-1215 MHz.

The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

📥 Download Datasheet

Datasheet Details

Part number TAN350
Manufacturer Advanced Power Technology
File Size 742.67 KB
Description high power COMMON BASE bipolar transistor
Datasheet download datasheet TAN350 Datasheet

Full PDF Text Transcription for TAN350 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TAN350. For precise diagrams, and layout, please refer to the original PDF.

TAN 350 350 Watts, 50 Volts, Pulsed Avionics 960 – 1215 MHz GENERAL DESCRIPTION The TAN350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed syste...

View more extracted text
power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. www.DataSheet4U.com ABSOLUTE CASE OUTLINE 55ST Style 1 MAXIMUM RATINGS W (At rated pulse condition) V V A °C °C Power Dissipation Device Dissipation @25°C (Pd) 1450 Voltage and Current Collector to Base Voltage (BVces ) 65 Emitter to Base Voltage (BVebo) 2.