TAN350 Datasheet | CHz Tech

DESCRIPTION The TAN 350 is a high power MON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55ST Style 1 ABSOLUTE MAXIMUM RATINGS Power Dissipation .. 1450 Device Dissipation @25!C (Pd) Voltage and Current 65 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 2.0 40 Collector Current (Ic) Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +230 W (At rated pulse condition) V V A !C !C ELECTRICAL CHARACTERISTICS @ 25!C SYMBOL Pout Pin Pg #c VSWR CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 960 - 1215 MHz VCC = 50 Volts PW = 10 "sec DF = 10% F = 1090 MHz MIN 350 70 7.0 38 3:1 7.5 40 TYP MAX UNITS W W d B % FUNCTIONAL CHARACTERISTICS @ 25!C BVebo BVces h FE $jc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 25 m A Ic = 50 m A Ic = 1A, Vce = 5V 2.0 65 10 .12 !C/W V V GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT .GHZ. OR CONTACT OUR FACTORY DIRECT. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 PW 10u S, DF=10% Zin Frequency 960 1030 1090 1150 1215 R 1.87 1.96 2.12 2.33 2.67 jx 2.58 1.92 1.27 0.65 0.03 R 1.2 1.06 0.96 0.91 0.89 ZCL jx 2.92 2.71 2.47 2.3 2.03 .. SERIES INPUT IMPEDANCE V.s FREQUENCY VCB=50V Pout=350 W 3 2 4 REAL(Ohm) 1 0 IMAGINARY -1 -2 -3 1 960 1030 1090 FREQUENCY(MHz) 1150 R jx -4 -5 SERIES COLLECTOR LOAD IMPEDANCE V.s FREQUENCY VCB=50V Pout= 350 W 1.45 1.35 REAL(Ohm) 1.25 1.15 1.05 0.95 0.85 0.75 960 1030...