MS1505
MS1505 is RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS manufactured by Advanced Power.
Features
- -
- -
- 160 MHz 13.6 VOLTS POUT = 30 WATTS GP = 10 d B MINIMUM MON EMITTER CONFIGURATION
DESCRIPTION
:
The MS1505 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF munications. The MS1505 utilizes an emitter ballasted die geometry to withstand severe load VSWR conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO VCEO VCES VEBO IC PDISS TJ TSTG
Parameter
Value
36 18 36 4.0 8.0 70 +200 -65 to +150
Unit
V V V V A W °C °C
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 1.2 °C/W
053-7086 Rev
- 10-2002
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symbol
BVCES BVCEO BVEBO ICBO h FE IC = 15m A IC = 50m A IE = 5m A VCB = 15V VCE = 5V
STATIC
Test Conditions Min.
VBE = 0m A IB = 0m A IC = 0m A IE = 0m A IC = 250m A 36 18 4.0 --20
Value Typ.
-----------
Max.
------5 200
Unit
V V V m A ---
DYNAMIC
Symbol
POUT GP COB f = 160MHz f = 160MHz f = 1MHz
Test Conditions Min.
PIN = 3.0W PIN = 3.0W VCB = 15V VCE = 13.6V VCE = 13.6V 30 10 ---
Value Typ.
-------
Max....
