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MS1505 - RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

General Description

The MS1505 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications.

The MS1505 utilizes an emitter ballasted die geometry to withstand severe load VSWR conditions.

Key Features

  • 160 MHz 13.6 VOLTS POUT = 30 WATTS GP = 10 dB.

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Datasheet Details

Part number MS1505
Manufacturer Advanced Power
File Size 115.69 KB
Description RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Datasheet download datasheet MS1505 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MS1505 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 160 MHz 13.6 VOLTS POUT = 30 WATTS GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1505 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1505 utilizes an emitter ballasted die geometry to withstand severe load VSWR conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Value 36 18 36 4.0 8.0 70 +200 -65 to +150 Unit V V V V A W °C °C Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 1.