MS1527
MS1527 is RF & MICROWAVE TRANSISTORS manufactured by Advanced Power.
Features
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- - 400 MHz 28 VOLTS POUT = 25 WATTS GP = 9 d B GAIN MINIMUM EMITTER BALLASTED METAL/CERAMIC PACKAGE INTERNAL INPUT MATCHING REFRACTORY/GOLD METALIZATION
DESCRIPTION
:
The MS1527 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness. The MS1527 can withstand 20:1 VSWR under rated operating conditions and is internally input matched to optimize power gain and efficiency over the band.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VEBO IC PDISS TJ T STG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value
60 30 3.5 3.0 70 +200 -65 +150
Unit
V V V A W °C °C
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 2.5 ° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C)
Symbol
BVCBO BVEBO BVCES ICBO HFE IC = 50 m A IE = 5 m A IC = 50 m A VCB = 30 V VCE = 5 V
STATIC
Test Conditions Min.
IE = 0m A IC = 0 m A VBE = 0 V IE = 0 m A IC = 500 A 60 3.5 60 --10
Value Typ.
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Max.
------3.0 120
Unit
V V V m A ---
DYNAMIC
Symbol
POUT ηC GP VSWR COB f = 400 MHz f = 400 MHz f = 400 MHz f = 400 MHz f = 1 MHz
Test Conditions Min.
VCC = 28 V VCC = 28 V VCC = 28 V VCC = 28 V VCB = 28V 25 50 9.0 20:1 ---
Value Typ.
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