MS1527 - RF & MICROWAVE TRANSISTORS

General Description

The MS1527 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness.

The MS1527 can withstand 20:1 VSWR under rated operating conditions and is internally input matched to optimize power gain and efficiency over the band.

Key Features

400 MHz 28 VOLTS POUT = 25 WATTS GP = 9 dB GAIN.

📥 Download Datasheet

MS1527 rf & microwave transistors by Advanced Power - Datasheet Preview

Datasheet Details

Part number	MS1527
Manufacturer	Advanced Power
File Size	108.44 KB
Description	RF & MICROWAVE TRANSISTORS
Datasheet	MS1527 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MS152A	LED Numeric Display	Micro Electronics
MS15	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER	Pan Jit International
MS1504	RF & MICROWAVE TRANSISTORS	Microsemi
MS151	Interface RF Connector with Switch	Hirose Electric
MS1510	RF & MICROWAVE TRANSISTORS	Microsemi

Other Datasheets by Advanced Power

Part Number	Description
MS1505	RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1527 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS Features • • • • • • • • 400 MHz 28 VOLTS POUT = 25 WATTS GP = 9 dB GAIN MINIMUM EMITTER BALLASTED METAL/CERAMIC PACKAGE INTERNAL INPUT MATCHING REFRACTORY/GOLD METALIZATION DESCRIPTION: The MS1527 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness. The MS1527 can withstand 20:1 VSWR under rated operating conditions and is internally input matched to optimize power gain and efficiency over the band.