1N2927
1N2927 is GERMANIUM TUNNEL DIODE manufactured by Advanced Semiconductor.
GERMANIUM TUNNEL DIODE
PACKAGE STYLE TO-18 DESCRIPTION:
The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications.
MAXIMUM RATINGS
IF TJ TSTG TSOLD
500 µA -65 C to +150 C -65 C to +200 C 10 S/250 C
NONE
CHARACTERISTICS
SYMBOL
IP IV VP VV VF IR
TC = 25 C
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
110 35 75 475
UNITS
µA µA m V m V m V m A
IF = 110 µA
1000 1.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without notice.
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