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1N2927 - GERMANIUM TUNNEL DIODE

General Description

The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications.

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Datasheet Details

Part number 1N2927
Manufacturer Advanced Semiconductor
File Size 22.84 KB
Description GERMANIUM TUNNEL DIODE
Datasheet download datasheet 1N2927 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N2927 GERMANIUM TUNNEL DIODE PACKAGE STYLE TO-18 DESCRIPTION: The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications. MAXIMUM RATINGS IF TJ TSTG TSOLD O O 500 µA -65 C to +150 C -65 C to +200 C 10 S/250 C O O O NONE CHARACTERISTICS SYMBOL IP IV VP VV VF IR TC = 25 C O TEST CONDITIONS MINIMUM 90 TYPICAL MAXIMUM 110 35 75 475 UNITS µA µA mV mV mV mA IF = 110 µA 600 1000 1.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV.