• Part: 2N5070
  • Description: NPN Silicon RF Power Transistor
  • Manufacturer: Advanced Semiconductor
  • Size: 79.39 KB
Download 2N5070 Datasheet PDF

Datasheet Summary

( DataSheet : .. ) NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed for High Power Linear Amplifier Application in the 2.0 to 75 MHz Range. Features INCLUDE: - Emitter Ballasted - mon Emitter Package MAXIMUM RATINGS 3.3 A IC 10 A (PEAK) VCE PDISS TSTG θJC 30 V 70 W @ TC = 25 OC -65 OC to +200 OC 2.5 OC/W PACKAGE STYLE TO- 60 1 = EMITTER 2 = BASE 3 = COLLECTOR CASE = EMITTER CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 200 mA BVCER IC = 200 mA RBE = 5.0 Ω ICEO VCE = 30 V ICEV VCE = 60 V VBE = -1.5 V VCE = 60 V VBE = -1.5 V TC = 150 OC ICBO VCB = 60...