2N6166 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.

Ø.125 NOM.

Key Features

ηC = 60 % min. @ 100 W/150 MHz.
PG = 6.0 dB min. @ 100 W/150 MHz.
Omnigold™ Metalization System C B B E H D G F E I J K.

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2N6166 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	2N6166
Manufacturer	Advanced Semiconductor
File Size	15.24 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	2N6166 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L E C Ø.125 NOM. FEATURES: • ηC = 60 % min. @ 100 W/150 MHz • PG = 6.0 dB min. @ 100 W/150 MHz • Omnigold™ Metalization System C B B E H D G F E I J K MAXIMUM RATINGS IC VCBO VEBO PDISS TJ TSTG θJC 9.0 A 65 V 4.0 V 117 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.5 °C/W DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .