2N6166
2N6166 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R L
Ø.125 NOM.
Features
:
- ηC = 60 % min. @ 100 W/150 MHz
- PG = 6.0 dB min. @ 100 W/150 MHz
- Omnigold™ Metalization System
E H D G F
MAXIMUM RATINGS
IC VCBO VEBO PDISS TJ TSTG θJC 9.0 A 65 V 4.0 V 117 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.5 °C/W
DIM A B C D E F G H I J K L
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980...
