2N6166 - HG RF POWER TRANSISTOR

General Description

The HG 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.

Key Features

C = 60 % min. @ 100 W/150 MHz PG = 6.0 dB min. @ 100 W/150 MHz Omnigold™ Metalization System.

2N6166 hg rf power transistor by HG Semi - Datasheet Preview

Datasheet Details

Part number	2N6166
Manufacturer	HG Semi
File Size	290.59 KB
Description	HG RF POWER TRANSISTOR
Datasheet	2N6166 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HG Semiconductors 2N6166HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: The HG 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz. FEATURES: C = 60 % min. @ 100 W/150 MHz PG = 6.0 dB min. @ 100 W/150 MHz Omnigold™ Metalization System MAXIMUM RATINGS IC 9.0 A VCBO 65 V VEBO 4.0 V PDISS 117 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C JC 1.5 °C/W PACKAGE STYLE .500 4L FLG FULL R .112x45° A E L C Ø.125 NOM. C B B E E H D G F K IJ DIM MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 B .125 / 3.18 C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 E .125 / 3.18 F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .