2N6166 Description
The HG 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.
2N6166 Key Features
- 65 °C to +150 °C
2N6166 is HG RF POWER TRANSISTOR manufactured by HG Semi.
| Manufacturer | Part Number | Description |
|---|---|---|
| 2N6166 | NPN SILICON RF POWER TRANSISTOR | |
Motorola Semiconductor |
2N6166 | RF Power Transistor |
The HG 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.