2N6166
2N6166 is HG RF POWER TRANSISTOR manufactured by HG Semi.
HG Semiconductors
2N6166HG RF POWER TRANSISTOR
ROHS pliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION:
The HG 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.
Features
:
C = 60 % min. @ 100 W/150 MHz PG = 6.0 dB min. @ 100 W/150 MHz Omnigold™ Metalization System
MAXIMUM RATINGS
IC 9.0 A
VCBO
65 V
VEBO
4.0 V
PDISS
117 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
JC 1.5 °C/W
PACKAGE STYLE .500 4L FLG
FULL R
.112x45° A
Ø.125 NOM.
K IJ
MINIMUM inches / mm
MAXIMUM inches / mm
A .220 / 5.59
.230 / 5.84
B .125 /...
