2N6199
2N6199 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI 2N6199 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz.
PACKAGE STYLE .380" 4L STUD
.112x45° A
ØC
FEATURES
:
- PG = 10 d B Typical at 25 W/175 MHz
- ∞ Load VSWR at Rated Conditions
- Omnigold™ Metallization System
#8-32 UNC-2A F E
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC 4.0 A 65 V 40 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +150 °C 4.4 °C/W
DIM A B C D E F G H I J MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10864
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICBO h FE Cob PG ηc
TC = 25 °C
TEST CONDITIONS
IC = 200 m A IC = 200 m A IE = 10 m A VCB = 30 V VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 25 W IC = 200 m A f = 1.0 MHz f = 175 MHz
MINIMUM TYPICAL MAXIMUM
65 35 4.0 2.0 10 50 8.5 50 10 60
UNITS
V V V m A --p F d B %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without...
