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2N6199 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI 2N6199 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz.

Key Features

  • PG = 10 dB Typical at 25 W/175 MHz.
  • ∞ Load VSWR at Rated Conditions.
  • Omnigold™ Metallization System D E B H I J #8-32 UNC-2A F E G.

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Datasheet Details

Part number 2N6199
Manufacturer Advanced Semiconductor
File Size 14.32 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet 2N6199 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6199 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz. PACKAGE STYLE .380" 4L STUD .112x45° A B C E ØC FEATURES: • PG = 10 dB Typical at 25 W/175 MHz • ∞ Load VSWR at Rated Conditions • Omnigold™ Metallization System D E B H I J #8-32 UNC-2A F E G MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 4.0 A 65 V 40 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +150 °C 4.4 °C/W DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.