2N6199 - HG RF POWER TRANSISTOR

General Description

The HG 2N6199 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz.

Key Features

PG = 10 dB Typical at 25 W/175 MHz Load VSWR at Rated Conditions Omnigold™ Metallization System.

2N6199 hg rf power transistor by HG Semi - Datasheet Preview

Datasheet Details

Part number	2N6199
Manufacturer	HG Semi
File Size	293.74 KB
Description	HG RF POWER TRANSISTOR
Datasheet	2N6199 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HG Semiconductors 2N6199HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: The HG 2N6199 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz. FEATURES: PG = 10 dB Typical at 25 W/175 MHz Load VSWR at Rated Conditions Omnigold™ Metallization System MAXIMUM RATINGS IC 4.0 A VCB 65 V PDISS 40 W @ TC = 25 °C TJ -55 °C to +200 °C TSTG -55 °C to +150 °C JC 4.4 °C/W PACKAGE STYLE .380" 4L STUD .112x45° A BC EE ØC B D #8-32 UNC-2A HI J G F E DIM A B C D E F G H I J M IN IM U M inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 M A X IM U M inches / mm .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.