2SC1252 - Silicon NPN Transistor

Datasheet Summary

Description

The 2SC1252 is a High Frequency Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz.

Advanced Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	2SC1252
Manufacturer	Advanced Semiconductor
File Size	28.53 KB
Description	Silicon NPN Transistor
Datasheet	2SC1252 Datasheet
Additional preview pages of the 2SC1252 datasheet.

📁 Similar Datasheet

2SC1200 - TRANSISTOR (Toshiba)
2SC1212 - Silicon NPN Transistor (Hitachi Semiconductor)
2SC1212 - NPN Transistor (INCHANGE)
2SC1212 - SILICON POWER TRANSISTOR (SavantIC)
2SC1212A - Silicon NPN Transistor (Hitachi Semiconductor)
2SC1212A - SILICON POWER TRANSISTOR (SavantIC)
2SC1212A - NPN Transistor (INCHANGE)
2SC1213 - Silicon NPN Transistor (Hitachi Semiconductor)
2SC1213 - SILICON NPN TRANSISTOR (LZG)
2SC1213 - NPN Silicon Transistor (SEMTECH)

Other Datasheets by Advanced Semiconductor

2SC1251 - Silicon NPN Transistor
2SC1971 - NPN SILICON RF POWER TRANSISTOR
2SC2585 - NPN SILICON RF TRANSISTOR
2SC2893 - NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text

2SC1252 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2SC1252 is a High Frequency Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz. PACKAGE STYLE TO-39 FEATURES INCLUDE: • High Gain -17 dB Typ. @ 200 MHz • Low NF - 3.0 dB Typ. @ 200 MHz • Hermetic TO-39 Package MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 400 mA 45 V 25 V 5 W @ TC = 25 °C -65 to +200 °C -65 to +200 °C 35 °C/W 1 = Emitter 2 = Base 3 & 4 = Collector (Case) CHARACTERISTICS SYMBOL BVCEO BVCBO ICBO IEBO hFE ft COB GPE NF IC = 100 µA VCE = 30 V VEB = 2.0 V VCE = 10 V VCE = 15 V VCE = 15 V VCB = 15 V VCE = 15 V VCE = 15 V IC = 5.0 mA TC = 25 °C TEST CONDITIONS MINIMUM 25 45 TYPICAL MAXIMUM UNITS V V 100 500 IC = 50 mA IC = 15 mA IC = 70 mA f = 1.

Published: Mar 22, 2005 |