Advanced Semiconductor 2SC1251
The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz.| Part No. | 2SC1251 |
|---|---|
| Datasheet | 2SC1251 Download |
| Manufacturer |  Advanced Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
:FEATURES
INCLUDE:● Direct Replacement for NE74020
● High Gain - 10 dB min. @ 1.0 GHz
● Gold Metalization PACKAGE STYLE .204 4L STUD
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC O O 300 mA 45 V 5.3W @ TC = 25 C -65 C to +200 C -65 C to +150 C 33 C/W O O O O 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO hFE COB PG P1dB TC = 25 C O TEST CONDITIONS IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 15 V VCE = 15 V IC = 100 mA IC = 100 mA f = 1.0 MHz POUT = 0.5 W f = 1000 MHz MINIMUM TYPICAL MAXIMUM 25 45 3.0 20 200 3.0 13 +27 +29 UNITS V V V --pF dB dBm A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/2 TVU005B S - PARAMETERS VCE = 20 Volts, FREQ. MHz 100 200 300 400 500 600 700 800 900 1,000 ID = 150 mA S12 S22 ANG. 30 30 30 30 35 35 35 40 45 45 S11 MAG. 0.735 0.840 0.860 0.857 0.855 0.850 0.850 0.850 0.855 0.860 S21 ANG.
