2SC1251 - Silicon NPN Transistor

Datasheet Summary

Description

The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz.

Advanced Semiconductor

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Datasheet Details

Part number	2SC1251
Manufacturer	Advanced Semiconductor
File Size	40.27 KB
Description	Silicon NPN Transistor
Datasheet	2SC1251 Datasheet
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2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. FEATURES INCLUDE: • Direct Replacement for NE74020 • High Gain - 10 dB min. @ 1.0 GHz • Gold Metalization PACKAGE STYLE .204 4L STUD MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC O O 300 mA 45 V 5.3W @ TC = 25 C -65 C to +200 C -65 C to +150 C 33 C/W O O O O 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO hFE COB PG P1dB TC = 25 C O TEST CONDITIONS IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 15 V VCE = 15 V IC = 100 mA IC = 100 mA f = 1.0 MHz POUT = 0.5 W f = 1000 MHz MINIMUM TYPICAL MAXIMUM 25 45 3.0 20 200 3.

Published: Mar 22, 2005 |