Datasheet Details
| Part number | 2SC2585 |
|---|---|
| Manufacturer | Advanced Semiconductor |
| File Size | 51.08 KB |
| Description | NPN SILICON RF TRANSISTOR |
| Datasheet | 2SC2585_AdvancedSemiconductor.pdf |
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Overview: www.DataSheet4U.com 2SC2585 NPN SILICON RF TRANSISTOR.
| Part number | 2SC2585 |
|---|---|
| Manufacturer | Advanced Semiconductor |
| File Size | 51.08 KB |
| Description | NPN SILICON RF TRANSISTOR |
| Datasheet | 2SC2585_AdvancedSemiconductor.pdf |
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: The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz.
PACKAGE STYLE MAXIMUM RATINGS IC VCEO VCBO VEB PT TJ TSTG θJC O O 65 mA 12 V 25 V 1.5 V 400 mW @ TC = 166 C -65 C to +200 C -65 C to +200 C 85 C/W O O O O DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 2 & 4 = EMITTER CHARACTERISTICS SYMBOL ICBO IEBO hFE ft VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 100 100 UNITS µA µA --GHz ww w.D ata Sh eet 4U .co m IC = 7.0 mA IC = 20 mA f = 1.0 GHz f = 1.0 MHz IC = 20 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz 50 115 8.5 0.2 18.0 11.0 6.5 11.0 15.0 10.0 2.0 250 Ccb 0.6 pF dB dB dB |S21E| GNF 2 10.0 VCE = 8.0 V VCE = 8.0 V IC = 7.0 mA IC = 10 mA IC = 7.0 mA MAG NF VCE = 8.0 V 2.5 dB A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
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