Advanced Semiconductor 2SC2585
The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz.| Part No. | 2SC2585 |
|---|---|
| Datasheet | 2SC2585 Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: PACKAGE STYLEMAXIMUM RATINGS
IC VCEO VCBO VEB PT TJ TSTG θJC O O 65 mA 12 V 25 V 1.5 V 400 mW @ TC = 166 C -65 C to +200 C -65 C to +200 C 85 C/W O O O O DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 2 & 4 = EMITTER CHARACTERISTICS SYMBOL ICBO IEBO hFE ft VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 100 100 UNITS µA µA --GHz ww w.D ata Sh eet 4U .co m IC = 7.0 mA IC = 20 mA f = 1.0 GHz f = 1.0 MHz IC = 20 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz 50 115 8.5 0.2 18.0 11.0 6.5 11.0 15.0 10.0 2.0 250 Ccb 0.6 pF dB dB dB |S21E| GNF 2 10.0 VCE = 8.0 V VCE = 8.0 V IC = 7.0 mA IC = 10 mA IC = 7.0 mA MAG NF VCE = 8.0 V 2.5 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1