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AM81214-030 - NPN SILICON RF POWER TRANSISTOR

Description

The ASI AM81214-030 is Designed for 1215

1400 MHz, L-Band Radar Applications.

Features

  • Internal Input/Output Matching Network.
  • PG = 7.2 dB at 5.0 W(peak)/1400 MHz.
  • Omnigold™ Metalization System.

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Datasheet preview – AM81214-030

Datasheet Details

Part number AM81214-030
Manufacturer Advanced Semiconductor
File Size 39.81 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet AM81214-030 Datasheet
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AM81214-030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM81214-030 is Designed for 1215 – 1400 MHz, L-Band Radar Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.2 dB at 5.0 W(peak)/1400 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 2.75 A VCC 32 V PDISS 63 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 2.4 °C/W PACKAGE STYLE .250 2L FLG COMMON BASE CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCBO IC = 10 mA BVCER IC = 20 mA RBE = 10 Ω BVEBO IE = 1.0 mA ICES VCE = 28 V hFE VCE = 5.0 V IC = 1.0 A MINIMUM TYPICAL MAXIMUM 55 55 3.5 5.0 15 150 UNITS V V V mA --- PIN 26 36 W PG VCC = 28 V PIN = 5.0 W f = 1215 to 1400 MHz 7.2 8.
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