AM81214-030
AM81214-030 is RF & MICROWAVE TRANSISTORS manufactured by STMicroelectronics.
DESCRIPTION
The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions. Low RF thermal resistance and puterized automatic wire bonding techniques ensure high reliability and product consistency. The AM81214-030 is supplied in the IMPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation- Device Current-
(TC ≤ 100°C)
63 2.75 32 250
- 65 to +200
W A V °C °C
Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 2.4 °C/W
- Applies only to rated RF amplifier operation
August 1992
1/6
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Valu e Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES h FE
IC = 10m A IE = 1m A IC = 20m A VBE = 0V VCE = 5V
IE = 0m A IC = 0m A RBE = 10Ω VCE = 28V IC = 1A
55 3.5 55
- 15
- -
- -
- -
- - 5 150
V V V m A
- DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Unit
PIN ηc GP
Note: f = 1215
- 1400MHz f = 1215
- 1400MHz f = 1215
- 1400MHz = =
1000 µ S 10%
PIN = 5W Peak PIN = 5W Peak PIN = 5W...
