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AM81214-030 - RF & MICROWAVE TRANSISTORS

Description

The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications.

The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions.

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Datasheet Details

Part number AM81214-030
Manufacturer STMicroelectronics
File Size 94.60 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet AM81214-030 Datasheet
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Full PDF Text Transcription

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AM81214-030 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 26 W MIN. WITH 7.2 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM81214-030 BRANDING 81214-30 DESCRIPTION The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
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