STMicroelectronics AM81214-030
The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions. The AM81214-030 is supplied in the IMPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching structures.| Part No. | AM81214-030 |
|---|---|
| Datasheet | AM81214-030 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 26 W MIN. WITH 7.2 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM81214-030 BRANDING 81214-30DESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 63 2.75 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.4 °C/W *Applies only to rated RF amplifier operation August 1992 1/6 AM81214-030ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit...
