Datasheet Details
| Part number | AM81214-030 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 94.60 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet |
 AM81214-030 Datasheet
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| Part number | AM81214-030 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 94.60 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet |
AM81214-030 Datasheet
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The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications.
The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions.
AM81214-030 .
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RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 26 W MIN.
WITH 7.2 dB GAIN .310 x .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AM81214-030 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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