ASAT30 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

.020 x 45° A Ø .130 NOM.

Key Features

Omnigold™ Metalization System M F E G H I J K.

📥 Download Datasheet

ASAT30 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	ASAT30
Manufacturer	Advanced Semiconductor
File Size	16.81 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	ASAT30 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ASA	HCMOS SURFACE-MOUNT CRYSTAL CLOCK OSCILLATOR	Abracon
ASA00AA18-L	DC-DC / Low Power Isolated Industrial	Emerson
ASA00AA36-L	DC-DC / Low Power Isolated Industrial	Emerson
ASA00B18-L	DC-DC / Low Power Isolated Industrial	Emerson
ASA00B24-L	DC-DC / Low Power Isolated Industrial	Emerson

Other Datasheets by Advanced Semiconductor

Part Number	Description
ASAT10	NPN SILICON RF POWER TRANSISTOR
ASAT15	NPN SILICON RF POWER TRANSISTOR
ASAT20	NPN SILICON RF POWER TRANSISTOR
ASAT25	NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

ASAT30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT30 is Designed for D C L B PACKAGE STYLE .250 2L FLG(A) .020 x 45° A Ø .130 NOM. .050 x 45° FEATURES: • • • Omnigold™ Metalization System M F E G H I J K MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm 10 A 60 V 35 V 140 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 3.5 OC/W O .055 / 1.40 .124 / 3.15 .243 / 6.17 .635 / 16.13 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 / 1.91 .245 / 6.22 .092 / 2.34 .065 / 1.65 .253 / 6.43 .665 / 16.89 .565 / 14.35 .749 / 19.02 .325 / 8.26 .006 / 0.15 .065 / 1.65 .095 / 2.41 .190 / 4.83 .255 / 6.