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ASI2010 - NPN SILICON RF POWER TRANSISTOR

Datasheet Summary

Description

The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.

Features

  • PG = 5 dB min. at 10 W/ 2,000 MHz.
  • Hermetic Microstrip Package.
  • Omnigold™ Metalization System L G H J F I K M NP DIM A B.

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Datasheet preview – ASI2010

Datasheet Details

Part number ASI2010
Manufacturer Advanced Semiconductor
File Size 18.29 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet ASI2010 Datasheet
Additional preview pages of the ASI2010 datasheet.

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Full PDF Text Transcription

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ASI2010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: • PG = 5 dB min. at 10 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System L G H J F I K M NP DIM A B MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 1.
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