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ASI2010 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.

Key Features

  • PG = 5 dB min. at 10 W/ 2,000 MHz.
  • Hermetic Microstrip Package.
  • Omnigold™ Metalization System L G H J F I K M NP DIM A B.

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Datasheet Details

Part number ASI2010
Manufacturer Advanced Semiconductor
File Size 18.29 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet ASI2010 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ASI2010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: • PG = 5 dB min. at 10 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System L G H J F I K M NP DIM A B MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 1.