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ASI2307 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz.

Key Features

  • PG = 9.5 dB min. at 7 W / 2300 MHz.
  • Hermetic Microstrip Package.
  • Omnigold™ Metalization System DIM A L G H J F I K M NP.

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Datasheet Details

Part number ASI2307
Manufacturer Advanced Semiconductor
File Size 18.28 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet ASI2307 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. B PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER FEATURES: • PG = 9.5 dB min. at 7 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 1.2 A 26 V 21.