BLY93H
BLY93H is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI BLY93H is Designed for Class C, 28 V High Band Applications up to 175 MHz.
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES
:
- mon Emitter
- PG = 9.0 d B at 25 W/175 MHz
- Omnigold™ Metalization System
ØC
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W
DIM A B C D E F G H I J
#8-32 UNC-2A F E
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICES h FE COB GP f T IC = 50 m A IC = 10 m A IE = 10 m A VCE = 36 V VCE = 5.0 V VCB = 28 V VCE = 28 V VCB = 28 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35 65 4.0 4.0
UNITS
V V V m A --p F
IC = 1.25 A f = 1.0 MHz f = 175 MHz IE = 200 m A f = 100 MHz
10 45 9.0 625
--- d B MHz
A D V A N C E D S E M I C O N D U C T O R, I N...
