BLY93H - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI BLY93H is Designed for Class C, 28 V High Band Applications up to 175 MHz.

Key Features

Common Emitter.
PG = 9.0 dB at 25 W/175 MHz.
Omnigold™ Metalization System B E E ØC C C E E I J B B.

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BLY93H npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	BLY93H
Manufacturer	Advanced Semiconductor
File Size	14.43 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	BLY93H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLY93H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY93H is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • Common Emitter • PG = 9.0 dB at 25 W/175 MHz • Omnigold™ Metalization System B E E ØC C C E E I J B B MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W DIM A B C D E F G H I J D H #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.