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Technical Data TRANSISTOR
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Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
65.0 V 36.0 V
4.0 V 3.0 A 1.0 A 70.0 W 3.1 °C/W 200.0 °C empty empty
NO. TYPE empty empty CASE empty empty
BLY93C NPN-RF empty empty SOT-120_M-4 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCBO
IC = 10.0 mA
65.0 -
V
2. BVCEO
IC = 50.0 mA
(1) 36.0
-
V
3. BVEBO
IE = 10.0 mA
4.0 -
V
4. ICEO
VCE = 36.0 V
- 4.0 mA
5. hFE
IC = 1.25 A, VCE = 5.0 V
(1) 10.0
100.0
-
6. fT
IC = 1.25 A, VCE = 28.
BLY93C Datasheet
