BLY93C - NPN SILICON RF POWER TRANSISTOR

Description

The ASI BLY93C is Designed for Class C, 28 V High Band Applications up to 175 MHz.

Features

Common Emitter.
PG = 9.0 dB at 25 W/175 MHz.
Omnigold™ Metalization System E B C D E H I C E Ø.125 NOM. FULL R J .125.

Advanced Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	BLY93C
Manufacturer	Advanced Semiconductor
File Size	14.54 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	BLY93C Datasheet
Additional preview pages of the BLY93C datasheet.

📁 Similar Datasheet

BLY93C - TRANSISTOR (DSI)
BLY93A - Power Transistor (Philips)
BLY93H - TRANSISTOR (DSI)
BLY91A - NPN SILICON POWER TRANSISTOR (ASI)
BLY92A - NPN SILICON RF POWER TRANSISTOR (ASI)
BLY92C - NPN SILICON RF POWER TRANSISTOR (ASI)
BLY-53 - Silicon NPN power VHF/UHF transistor (Great American Electronics)
BLY49 - Bipolar NPN Device (Seme LAB)
BLY50 - Bipolar NPN Device (Seme LAB)
BLY53 - Silicon NPN power VHF/UHF transistor (Great American Electronics)

Other Datasheets by Advanced Semiconductor

BLY93H - NPN SILICON RF POWER TRANSISTOR
BLY90 - NPN SILICON RF POWER TRANSISTOR
BLY91C - NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text

BLY93C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY93C is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • Common Emitter • PG = 9.0 dB at 25 W/175 MHz • Omnigold™ Metalization System E B C D E H I C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W DIM A B C D E F G H I J F G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .240 / 6.10 .255 / 6.

Published: Jan 13, 2006 |