BLY93C
BLY93C is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI BLY93C is Designed for Class C, 28 V High Band Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES
:
- mon Emitter
- PG = 9.0 d B at 25 W/175 MHz
- Omnigold™ Metalization System
C D E H I
Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W
DIM A B C D E F G H I J
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78
.004 / 0.10 .085 / 2.16 .160 / 4.06
.006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11
.240 / 6.10
.255 / 6.48
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICES h FE COB GP f T IC = 50 m A IC = 10 m A IE = 10 m A VCE = 36 V VCE = 5.0 V VCB = 28 V VCE = 28 V VCB = 28 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35 65 4.0 4.0
UNITS
V V V m A --p F
IC = 1.25 A f = 1.0 MHz f = 175 MHz IE = 200 m A f = 100 MHz
10 45 9.0...
