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BLY90 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI BLY90 is Designed for Class A,B and C, 12.5 V High Band Applications up to 175 MHz.

Key Features

  • Common Emitter.
  • PG = 5.0 dB at 50 W/175 MHz.
  • Omnigold™ Metalization System B C E ØC E B H I J D.

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Datasheet Details

Part number BLY90
Manufacturer Advanced Semiconductor
File Size 13.85 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet BLY90 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLY90 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY90 is Designed for Class A,B and C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • Common Emitter • PG = 5.0 dB at 50 W/175 MHz • Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 8.0 A 36 V 18 V 4.0 V 130 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.35 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.