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BLY91C Datasheet PDF

Advanced Semiconductor BLY91C

BLY91C is Designed for 28 V Large Signal Class A,B and C Amplifier Applications up to 175 MHz.
Part No. BLY91C
Datasheet BLY91C Download
Manufacturer
Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
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BLY91C datasheet page 1 preview

DESCRIPTION

: The ASI

FEATURES

INCLUDE:
● Emitter Ballasting
● Gold Metalization
● 3/8" SOE Stud Package PACKAGE STYLE .380" 4L STUD

MAXIMUM RATINGS

IC VCE VCB PDISS TJ TSTG θJC 1.0 A 35 V 65 V 20 W @ TC = 25 °C -65 °C to + 200 °C -65 °C to + 150 °C 8.7 °C/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE COB PG ηC TC = 25 °C TEST CONDITIONS IC = 200 mA IC = 10 mA IE = 1.0 mA VCE = 36 V VCE = 5.0 V VCB = 30 V VCC =28 V POUT = 8.0 W IC = 400 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 65 35 4.0 1.0 10 100 15 12.0 65 13.0 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE
● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1