The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BLY91C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY91C is Designed for 28 V Large Signal Class A,B and C Amplifier Applications up to 175 MHz.
FEATURES INCLUDE:
• Emitter Ballasting • Gold Metalization • 3/8" SOE Stud Package
PACKAGE STYLE .380" 4L STUD
MAXIMUM RATINGS
IC VCE VCB PDISS TJ TSTG θJC 1.0 A 35 V 65 V 20 W @ TC = 25 °C -65 °C to + 200 °C -65 °C to + 150 °C 8.7 °C/W
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO ICES hFE COB PG ηC
TC = 25 °C
TEST CONDITIONS
IC = 200 mA IC = 10 mA IE = 1.0 mA VCE = 36 V VCE = 5.0 V VCB = 30 V VCC =28 V POUT = 8.0 W IC = 400 mA f = 1.0 MHz f = 175 MHz
MINIMUM TYPICAL MAXIMUM
65 35 4.0 1.0 10 100 15 12.0 65 13.0
UNITS
V V V mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.