HF10-12S
HF10-12S is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
Features
:
- PG = 20 dB min. at 10 W/30 MHz
- IMD3 = -30 dBc max. at 10 W (PEP)
- Omnigold™ Metalization System
ØC
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC
#8-32 UNC-2A F E
4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.2 OC/W
DIM A B C D E F G H I J MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175...
