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HF10-12S - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI HF10-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A

Key Features

  • PG = 20 dB min. at 10 W/30 MHz.
  • IMD3 = -30 dBc max. at 10 W (PEP).
  • Omnigold™ Metalization System B C E ØC E B H I J D.

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Datasheet Details

Part number HF10-12S
Manufacturer Advanced Semiconductor
File Size 17.74 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet HF10-12S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HF10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC O O #8-32 UNC-2A F E G 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.2 OC/W O O O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.