HF10-12F - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI HF10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A

Key Features

PG = 20 dB min. at 10 W/30 MHz.
IMD3 = -30 dBc max. at 10 W (PEP).
Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125.

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HF10-12F npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	HF10-12F
Manufacturer	Advanced Semiconductor
File Size	18.31 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	HF10-12F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HF10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.2 OC/W O O O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm G H I MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.