HF100-12
HF100-12 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-12 is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R Ø.125 NOM. L
Features
:
- PG = 12 dB min. at 100 W/30 MHz
- IMD3 = -30 dBc max. at 100 W (PEP)
- Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC
20 A 36 V 18 V 4.0 V 290 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 0.6 OC/W
DIM A B C D E F G H I J K L
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89
.230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 /...
