HF100-28
HF100-28 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB munications. Diffused ballasting provide High VSRW Capability under rated operating conditions.
PACKAGE STYLE .500 4L FLG
.112x45° A L
Features
:
- PG = 15 dB min. at 100 W/30 MHz
- High linear power output
- IMD3 = -30 dBc max. at 100 W (PEP)
- Omnigold™ Metalization System
- 28 V CE operation
FULL R
Ø.125 NOM.
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 20 A 65 V 36 V 4.0 V 270 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.65 °C/W
DIM A B C D E F G H I J K L
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