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HF100-28 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications.

Diffused ballasting provide High VSRW Capability under rated operating conditions.

Key Features

  • PG = 15 dB min. at 100 W/30 MHz.
  • High linear power output.
  • IMD3 = -30 dBc max. at 100 W (PEP).
  • Omnigold™ Metalization System.
  • 28 V CE operation E FULL R C Ø.125 NOM. C B B D G F E E H I J K.

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Datasheet Details

Part number HF100-28
Manufacturer Advanced Semiconductor
File Size 73.93 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet HF100-28 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG .112x45° A L FEATURES: • PG = 15 dB min. at 100 W/30 MHz • High linear power output • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System • 28 V CE operation E FULL R C Ø.125 NOM. C B B D G F E E H I J K MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 20 A 65 V 36 V 4.0 V 270 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.65 °C/W DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .