Advanced Semiconductor HF150-50F
HF150-50F is Designed for PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: • PG = 14 dB min.| Part No. | HF150-50F |
|---|---|
| Datasheet | HF150-50F Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI at 150 W/30 MHz● IMD3 = 100 dBc max. at 150 W (PEP)
● Omnigold™ Metalization System C B E B D G F C Ø.125 NOM. E E H
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC 10 A DIM MINIMUM inches / mm I J K MAXIMUM inches / mm 110 V 55 V 4.0 V 233 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 0.75 OC/W O O O A B C D E F G H I J K L .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10612 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICEO ICES hFE Cob GP IMD3 ηC IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VCE = 60 V VCE = 6 V VCB = 50 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 110 110 55 4.0 5 5 UNITS V V V V mA mA --pF dB dBc % IC = 1.4 A f = 1.0 MHz 18 43.5 220 14 VCE = 50 V ICQ = 100 mA POUT = 150 W (PEP) 37 -30 A D V A N C E D S E M I C O N D U C T O R, I N C.