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HF150-50S - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI HF150-50S is Designed for PACKAGE STYLE .500 4L STUD (A) .112 x 45° A Ø .630 NOM

Key Features

  • PG = 14 dB min. at 150 W/30 MHz.
  • IMD3 = 100 dBc max. at 150 W (PEP).
  • Omnigold™ Metalization System B C E C E B E D G.

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Datasheet Details

Part number HF150-50S
Manufacturer Advanced Semiconductor
File Size 16.36 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet HF150-50S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is Designed for PACKAGE STYLE .500 4L STUD (A) .112 x 45° A Ø .630 NOM FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W (PEP) • Omnigold™ Metalization System B C E C E B E D G MAXIMUM RATINGS IC VCBO VEBO VCEO PDISS TJ T STG θ JC 10 A 110 V 4.0 V 55 V 233 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 0.75 OC/W O DIM A B C D E F G H 1/4-28 UNF-2A F H MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .545 / 13.84 .495 / 12.57 .003 / 0.08 .185 / 4.70 .497 / 12.62 .230 / 5.84 1.050 / 26.67 .555 / 14.10 .505 / 12.83 .007 / 0.18 .830 / 21.08 .198 / 5.03 .530 / 13.