Advanced Semiconductor HF150-50S
HF150-50S is Designed for PACKAGE STYLE .500 4L STUD (A) .112 x 45° A Ø .630 NOM FEATURES: • PG = 14 dB min.| Part No. | HF150-50S |
|---|---|
| Datasheet | HF150-50S Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI at 150 W/30 MHz● IMD3 = 100 dBc max. at 150 W (PEP)
● Omnigold™ Metalization System B C E C E B E D G
MAXIMUM RATINGS
IC VCBO VEBO VCEO PDISS TJ T STG θ JC 10 A 110 V 4.0 V 55 V 233 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 0.75 OC/W O DIM A B C D E F G H 1/4-28 UNF-2A F H MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .545 / 13.84 .495 / 12.57 .003 / 0.08 .185 / 4.70 .497 / 12.62 .230 / 5.84 1.050 / 26.67 .555 / 14.10 .505 / 12.83 .007 / 0.18 .830 / 21.08 .198 / 5.03 .530 / 13.46 ORDER CODE: ASI10613 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICEO ICES hFE Cob GP IMD3 ηC IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VE = 60 V VCE = 6 V VCB = 50 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 110 110 55 4.0 5 5 UNITS V V V V mA mA --pF dB dBc % IC = 1.4 A f = 1.0 MHz 18 43.5 220 14 VCE = 50 V ICQ =100 mA POUT = 150 W(PEP) 37 -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice.