Advanced Semiconductor HF50-12S
HF50-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: B • PG = 16 dB min.| Part No. | HF50-12S |
|---|---|
| Datasheet | HF50-12S Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI at 50 W/30 MHz● IMD3 = -30 dBc max. at 50 W (PEP)
● Omnigold™ Metalization System D C E ØC E B H I J
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC O O #8-32 UNC-2A F E G 12.0 A 36 V 18 V 3.5 V 183 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 1.05 OC/W O O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10597 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES hFE COB GP ηC IC = 50 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.0 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 3.5 10 UNITS V V V V mA --pF dB IC = 5.0 A f = 1.0 MHz PIN = 7 W f = 50 MHz 10 --300 VCB = 12.5 V VCE = 12.5 V POUT = 50 W(PEP) 10 55 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice.