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HF75-28F Datasheet PDF

Advanced Semiconductor HF75-28F

HF75-28F is Designed for B .112 x 45° A PACKAGE STYLE .380 4L FLG FEATURES: • PG = 18 dB min.
Part No. HF75-28F
Datasheet HF75-28F Download
Manufacturer
Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
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HF75-28F datasheet page 1 preview

DESCRIPTION

: The ASI at 75 W/30 MHz
● IMD3 = -30 dBc max. at 75 W (PEP)
● Omnigold™ Metalization System E B C D F E C E Ø.125 NOM. FULL R J .125 G H I

MAXIMUM RATINGS

IC VCB VCE PDISS TJ T STG θ JC O 10 A 60 V 35 V 140 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.05 OC/W O O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10606 CHARACTERISTICS SYMBOL BV CEO BV CER BV EBO ICES hFE Cob GPE IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 25 V TC = 25 OC NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --pF dB IC = 1.0 A f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz Snd. = -7 dB 10 100 80 13.5 14.5 -55 PREF = 16 W dBc A D V A N C E D S E M I C O N D U C T O R, I N C.