HF75-28F
HF75-28F is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI HF75-28F is Designed for
B .112 x 45° A
PACKAGE STYLE .380 4L FLG
FEATURES
:
- PG = 18 d B min. at 75 W/30 MHz
- IMD3 = -30 d Bc max. at 75 W (PEP)
- Omnigold™ Metalization System
Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
IC VCB VCE PDISS TJ T STG θ JC
10 A 60 V 35 V 140 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.05 OC/W
DIM A B C D E F G H I J
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10606
CHARACTERISTICS
SYMBOL
BV CEO BV CER BV EBO ICES h FE Cob GPE IMD3 IC = 50 m A IC = 50 m A IE = 10 m A VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 25 V
TC = 25 OC
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
35 60 4.0 5
UNITS
V V V m A --p F d B
IC = 1.0 A f = 1.0 MHz ICQ = 3.2 A Vision = -8 d B Side Band = -16 d B f = 225 MHz Snd. = -7 d B
100...
