HF8-28F - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI HF8-28F is Designed for PACKAGE STYLE .380 4L FLG

Key Features

PG = 21 dB min. at 8 W/30 MHz.
IMD3 = -30 dBc max. at 8 W (PEP).
Omnigold™ Metalization System B .112 x 45° A E B C E C D E Ø.125 NOM. FULL R J .125.

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HF8-28F npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	HF8-28F
Manufacturer	Advanced Semiconductor
File Size	18.31 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	HF8-28F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HF8-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28F is Designed for PACKAGE STYLE .380 4L FLG FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System B .112 x 45° A E B C E C D E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS F IC VCBO VCEO VCES VEBO PDISS TJ T STG θ JC O 1.0 A 65 V 35 V 65 V 4.0 V 13.0 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 13.5 OC/W O O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm G H I MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.