HF8-28S - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI HF8-28S is Designed for PACKAGE STYLE .380 4L STUD

Key Features

PG = 21 dB min. at 8 W/30 MHz.
IMD3 = -30 dBc max. at 8 W (PEP).
Omnigold™ Metalization System .112x45° A B C E ØC E B H I J.

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HF8-28S npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	HF8-28S
Manufacturer	Advanced Semiconductor
File Size	17.59 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	HF8-28S Datasheet

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Full PDF Text Transcription (Reference)

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HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System .112x45° A B C E ØC E B H I J MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ T STG θ JC O O D 1.0 A 65 V 35 V 65 V 4.0 V 13.0 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 13.5 OC/W O O O DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.