MRF427 Datasheet PDF | Advanced Semiconductor

Advanced Semiconductor MRF427

MRF427 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .500 4L FLG .112x45° L A FULL R FEATURES: • PG = 18 dB min.

Max Operating Temp : 150°C

Source: Octopart

Part No.	MRF427
Datasheet	MRF427 Download
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
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DESCRIPTION

: The ASI at 25 W/30 MHz
● IMD3 = -34 dBc max. at 25 W (PEP)
● Omnigold™ Metalization System E C Ø.125 NOM. C B B D G F E E H

MAXIMUM RATINGS

IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O I J K 6.0 A 110 V 65 V 4.0 V 80 W @ TC = 25 °C -65 C to +200 °C -65 C to +150 °C 2.19 °C/W ° DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.67 ORDER CODE: ASI10467 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO hFE Cob GP IMD3 TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 200 mA IE = 10 mA VCE = 5.0 V VCB = 50 V IC = 500 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 110 110 65 4.0 15 90 60 18 20 - 37 -34 UNITS V V V V --pF dB dBc VCE = 50 V POUT = 25 W (PEP) f = 30 MHz A D V A N C E D S E M I C O N D U C T O R, I N C.