Advanced Semiconductor MSC8001
High Power GaAs FET
| Part No. | MSC8001 |
|---|---|
| Datasheet | MSC8001 Download |
| Manufacturer |  Advanced Semiconductor |
| Description | High Power GaAs FET |
| Buy | Stock & Price |
FEATURES
INCLUDE:● 27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Chip Devices are Selected from Standard Military Grade Wafers Hermetic Metal/Ceramic Package Suitable for Hi-Rel
APPLICATIONS
Custom Electrical Test and Screening Available for Source Control Drawings●
● FET PACKAGE TYPE 30
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● TRANS1.SYM RF
ELECTRICAL SPECIFICATIONS
SYMBOL MAG PMAG FREQUENCY MAX AVAILABLE GAIN TA = 25 C O TEST CONDITIONS = 8.0 GHz MINIMUM TYPICAL MAXIMUM 8.5 24 UNITS dB dBm OUTPUT POWER AT MAG TUNING FREQUENCY = 8.0 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1