Advanced Semiconductor MSC8004
HIGH POWER GaAs FET
| Part No. | MSC8004 |
|---|---|
| Datasheet | MSC8004 Download |
| Manufacturer |  Advanced Semiconductor |
| Description | HIGH POWER GaAs FET |
| Buy | Stock & Price |
FEATURES
INCLUDE:● FET PACKAGE TYPE 30 High Output Power: P1dB = 1.6 W (TYP) @ 12 GHz High power gain: GLP = 5 dB (TYP) @ 12 GHz High power added efficiency: Hadd = 18% (TYP) @ 12 GHz
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APPLICATIONS
:● S to Ku Band Power Amplifiers TRANS1.SYM
ELECTRICAL SPECIFICATIONS
SYMBOL IDDS VGS (off) VDS = 3.0 V VDS = 3.0 V TA = 25 C O TEST CONDITIONS SATURATED DRAIN CURRENT MINIMUM TYPICAL MAXIMUM 850 -2 1100 -3 1400 -5 UNITS mA V VGS = 0 V ID = 1.0 mA GATE TO SOURCE CUT-OFF VOLTAGE A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1