MSC8004 - HIGH POWER GaAs FET

Advanced Semiconductor

Datasheet Details

Part number	MSC8004
Manufacturer	Advanced Semiconductor
File Size	44.19 KB
Description	HIGH POWER GaAs FET
Datasheet	MSC8004 Datasheet

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MSC8004 HIGH POWER GaAs FET FEATURES INCLUDE: • FET PACKAGE TYPE 30 High Output Power: P1dB = 1.6 W (TYP) @ 12 GHz High power gain: GLP = 5 dB (TYP) @ 12 GHz High power added efficiency: Hadd = 18% (TYP) @ 12 GHz • www.DataSheet4U.com • APPLICATIONS: • S to Ku Band Power Amplifiers TRANS1.SYM ELECTRICAL SPECIFICATIONS SYMBOL IDDS VGS (off) VDS = 3.0 V VDS = 3.0 V TA = 25 C O TEST CONDITIONS SATURATED DRAIN CURRENT MINIMUM TYPICAL MAXIMUM 850 -2 1100 -3 1400 -5 UNITS mA V VGS = 0 V ID = 1.0 mA GATE TO SOURCE CUT-OFF VOLTAGE A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV.