MSC80914 Datasheet PDF | Advanced Semiconductor

Advanced Semiconductor MSC80914

MSC80914 is Designed for Class C, Common Base General Purpose Applications to 2.3 GHz.

Part No.	MSC80914
Datasheet	MSC80914 Download
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
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DESCRIPTION

: The ASI PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B

FEATURES

INCLUDE:
● Gold Metalization
● Site Emitter Ballasting L G H J F I K M NP

MAXIMUM RATINGS

IC VCC DIM A B C D E F MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 200 mA 35 V 7.0 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 20 C/W O O O O O O .255 / 6.48 .132 / 3.35 .117 / 2.97 PDISS TJ TSTG θJC G H I J K L M N P .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob Pout PG ηC IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V TC = 25 C O TEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 0.5 UNITS V V V mA --pF W dB % IC = 100 mA f = 1.0 MHz 15 3.0 1.0 7.0 35 1.25 8.0 40 150 3.5 VCC = 28 V Pin = 200 mW fo = 2.0 GHz A D V A N C E D S E M I C O N D U C T O R, I N C.