Datasheet4U Logo Datasheet4U.com

MSC80917 - NPN SILICON RF MICROWAVE TRANSISTOR

General Description

The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications.

📥 Download Datasheet

Datasheet Details

Part number MSC80917
Manufacturer Advanced Semiconductor
File Size 107.35 KB
Description NPN SILICON RF MICROWAVE TRANSISTOR
Datasheet download datasheet MSC80917 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSC80917 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. PACKAGE STYLE .280 2L FL (B) 2 3 1 FEATURES INCLUDE: • Omnigold™ Metalization System • POUT 4.0 W Min. • GP = 10 dB MAXIMUM RATINGS IC www.DataSheet4U.com 1.0 A 37 V 7.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 35 °C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER VCE PDISS TJ TSTG θJC CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICES hFE GP POUT η TC = 25 °C TEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 35 V VCE = 5.0 V VCE = 35 V IC = 100 mA f = 1025 to 1150 MHz DUTY CYCLE = 1.0% MINIMUM TYPICAL MAXIMUM 45 20 3.5 1.0 20 10 4.