Advanced Semiconductor MSC80917
MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications.| Part No. | MSC80917 |
|---|---|
| Datasheet | MSC80917 Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF MICROWAVE TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI PACKAGE STYLE .280 2L FL (B) 2 3 1FEATURES
INCLUDE:● Omnigold™ Metalization System
● POUT 4.0 W Min.
● GP = 10 dB
MAXIMUM RATINGS
IC 1.0 A 37 V 7.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 35 °C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER VCE PDISS TJ TSTG θJC CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICES hFE GP POUT η TC = 25 °C TEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 35 V VCE = 5.0 V VCE = 35 V IC = 100 mA f = 1025 to 1150 MHz DUTY CYCLE = 1.0% MINIMUM TYPICAL MAXIMUM 45 20 3.5 1.0 20 10 4.0 35 120 UNITS V V V mA PIN = 400 mW PULSE WIDTH = 10 µS dB W % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1