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TPV590
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TPV590 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band IV-V Transmitters.
PACKAGE STYLE 205 4L STUD FEATURES INCLUDE:
• Gold Metallization • Emitter Ballasting • High Gain
MAXIMUM RATINGS
IC VCBO PDISS TJ T STG θ JC 300 mA 45 V 5.3 W @ TC = 25 OC -65 OC to +200 OC -65 OCto +200 OC 33 OC/W
TC = 25 OC 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BV CBO BV CER BV EBO hFE COB PG VCE = 20 V IMD3 IC = 1.0mA IC = 10 mA IE = 1.0 mA VCE = 5 V VCB = 28 V VCE = 20 V
TEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
45 45 3.5
UNITS
V V V ---
IC = 100 mA f = 1.0 MHz IC = 150 mA IC = 150 mA POUT = 0.5 W f = 860 MHz Pref = 0.5 W
20 2.0 13 14 3.
TPV590 Datasheet
