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TPV593 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications.

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Datasheet Details

Part number TPV593
Manufacturer Advanced Semiconductor
File Size 20.62 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet TPV593 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPV593 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC 1.2 A 45 V 17.5 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 10 OC/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CEO BV CBO BV EBO hFE Cob IC = 40 mA IC = 10 mA IE = 10 mA VCE = 5.0 V VCB = 28 V Po = 2.0 W PG TC = 25 OC NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 26 45 4.0 UNITS V V V --- IC = 250 mA f = 1.0 MHz SOUND CARRIER = -10 dB CHROMA = 16 dB 10 8.0 pF VISION CARRIER = -8.0 dB 10 12 dB VCE = 25 V Po = 2.