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ULBM2TE - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI ULBM2TE is Designed for PACKAGE STYLE TO-39GE B C ØA 45°

Key Features

  • Omnigold™ Metalization System ØD E.

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Datasheet Details

Part number ULBM2TE
Manufacturer Advanced Semiconductor
File Size 16.98 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet ULBM2TE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for PACKAGE STYLE TO-39GE B C ØA 45° FEATURES: • • • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O F 0.40 A 36 V 16 V 4.0 V 5 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 35 OC/W O DIM A B C D E F G H G H MINIMUM inches / mm MAXIMUM inches / mm .200 / 5.080 .029 / 0.740 .028 / 0.720 .355 / 9.020 .315 / 8.010 .165 / 4.200 .500 / 12.700 .016 / 0.410 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .180 / 4.570 .750 / 19.050 .020 / 0.508 ORDER CODE: ASI10679 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob PG ηC IC = 50 mA IC = 50 mA TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.