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ULBM2T - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI ULBM2T is Designed for PACKAGE STYLE TO-39 B ØA 45° C

Key Features

  • Omnigold™ Metalization System ØD E.

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Datasheet Details

Part number ULBM2T
Manufacturer Advanced Semiconductor
File Size 16.36 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet ULBM2T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ULBM2T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES: • • • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCB0 VCEO VCES VEBO PDISS TJ TSTG θ JC O F 0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 35 OC/W O O DIM A B C D E F G H G H MINIMUM inches / mm MAXIMUM inches / mm .200 / 5.080 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .016 / 0.407 .020 / 0.508 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600 ORDER CODE: ASI10676 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob PG ηC IC = 5 mA IC = 25 mA TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 UNITS V V V mA --- IE = 1.